參數(shù)資料
型號: 2SC3545
廠商: NEC Corp.
英文描述: Oscillator And Mixer NPN Silicon Epitaxial Transistor(振蕩器和混合器NPN外延晶體管)
中文描述: 振蕩器和混頻器NPN硅外延晶體管(振蕩器和混合器npn型外延晶體管)
文件頁數(shù): 2/8頁
文件大?。?/td> 91K
代理商: 2SC3545
2
2SC3545
TYPICAL CHARACTERISTICS (T
A
= 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
300
100
50
150
200
250
0
10
20
50
100
200
50
25
1
5
10
50
0.5
75
125
100
T
A
-Ambient Temperature-
°
C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-
h
F
-
V
CE
= 10 V
0
0.5
5
10
15
1
5
10
50 70
I
C
-Collector Current-mA
INSERTION GAIN, MAXIMUM AVAILABLE
GAIN vs. COLLECTOR CURRENT
G
m
-
|
2
|
2
-
V
CE
= 10 V
f = 1.0 GHz
0.1
0.5
0.3
0.2
0.7
1
3
2
1
2
3
7
5
10
20
30
V
CB
-Collector to Base Voltage-V
TYPICAL DEVICE CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
r
-
f = 1.0 MHz
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0.1
0.5 1.0
10
5.0
30
I
C
-Collector Current-mA
GAIN BANDWIDTH PROUDCT vs.
COLLECTOR CURRENT
f
T
-
V
CE
= 10 V
0
0.5
5
10
15
1
5
10
50 70
I
C
-Collector Current-mA
COLLECTOR TO BASE TIME CONSTANT
vs. COLLECTOR CURRENT
C
C
.r
b
-
V
CE
= 10 V
f = 31.9 MHz
Free air
MAG
|S
21e
|
2
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