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參數(shù)資料
| 型號(hào)： | 2SC3552 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關(guān)穩(wěn)壓器 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | 2SC3552 |
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0V
TYP
-
-
-
-
-
-
1.5
0.3
MAX
1100
500
12
UNIT
V
V
A
A
W
V
V
T
mb
I
C
= 4.5A; I
B
= 1.0A
I
F
= 4.5A
I
C
=4.5A,I
B1
=-I
B2
=0.8A,V
CC
=80V
25
150
3
2.0
1.0-
s
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
-
-
MAX
1100
500
5
12
3
150
150
150
UNIT
V
V
V
A
A
W
-
-
-
Tmb
25
-55
-
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
f
T
C
c
t
on
t
s
t
f
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
V
CB
=1000V
V
EB
=5V
I
C
=1mA
I
C
= 4.5A; I
B
= 1A
I
C
= 1.0A; V
CE
= 5V
I
C
= 1.0A; V
CE
= 12V
V
CB
= 10V
I
C
=4.5A,I
B1
=-I
B2
=0.8A,V
CC
=80V
I
C
=4.5A,I
B1
=-I
B2
=0.8A,V
CC
=80V
I
C
=4.5A,I
B1
=-I
B2
=0.8A,V
CC
=80V
TYP
-
-
500
-
10
15
280
MAX
0.2
0.2
UNIT
mA
mA
V
V
3.0
-
-
MHz
pF
us
us
us
0.3
1.0
ELECTRICAL CHARACTERISTICS
MT-100
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
2SC3552
Silicon Epitaxial Planar Transistor
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3553 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTOR SP 35V .5A .3W ECB |
| 2SC3554-T1-AZ(SK) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3554-T1-AZ-SL | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 300V 0.2A 4-Pin(3+Tab) Power Mini-Mold T/R |
| 2SC3554-T1-AZ-SM | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3559 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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