參數(shù)資料
型號: 2SC3421-O
元件分類: 功率晶體管
英文描述: 1 A, 120 V, NPN, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-8H1A, 3 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 119K
代理商: 2SC3421-O
2SC3421
2004-07-07
3
C
ollec
tor
po
wer
dis
si
pati
on
P
C
(W
)
C
olle
ct
or
cur
re
nt
I
C
(m
A)
Collector-emitter voltage VCE (V)
IC – VCE
Coll
ect
or
cur
re
nt
I
C
(m
A)
Collector current IC (mA)
hFE – IC
DC
cur
re
nt
gain
h
FE
Collector current IC (mA)
VCE (sat) – IC
Col
lect
or
-e
m
itte
rs
a
tu
ra
tion
volt
ag
e
V
CE
(s
a
t)
(
V
)
Base-emitter voltage VBE (V)
IC – VBE
Ambient temperature Ta (°C)
PC – Ta
Safe Operating Area
Coll
ect
or
cur
re
nt
I
C
(m
A)
Collector-emitter voltage VCE (V)
0
Common emitter
Tc = 25°C
1200
600
6
8
12
10
16
4
5
25
10
IB = 1 mA
0
7
4
2
200
400
800
1000
2
14
3
(1) Tc = Ta Infinite heat sink
(2) No heat sink
0
40
60
100
80
20
12
0
4
2
6
(1)
(2)
120
140
160
8
10
25
10
100
Common emitter
VCE = 5 V
10
30
50
500
30
100
1000
Tc = 100°C
25
300
3
300
25
Common emitter
VCE = 5 V
1000
400
600
800
Tc = 100°C
25
200
0.2
0.4
0.8
1.0
0.6
0
1.2
3
10
30
100
300
10
50
300
500
1000
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature
100
3000
IC max (pulsed)*
IC max (continuous)*
VCEO max
1 ms*
10 ms*
100 ms*
DC operation
Tc = 25°C
30
25
Common emitter
IC/IB = 10
3
1
0.01
0.05
0.1
30
100
Tc = 100°C
25
1000
300
10
0.03
0.3
0.5
相關(guān)PDF資料
PDF描述
2SC3421 1 A, 120 V, NPN, Si, POWER TRANSISTOR
2SC3422-Y 3 A, 40 V, NPN, Si, POWER TRANSISTOR
2SC3422-O 3 A, 40 V, NPN, Si, POWER TRANSISTOR
2SC3422O 3 A, 40 V, NPN, Si, POWER TRANSISTOR
2SC3422 3 A, 40 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC3421-O(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SC3421-Y(Q) 制造商:Toshiba 功能描述:NPN Bulk 制造商:Toshiba America Electronic Components 功能描述:Tr.,NPN,120V/1A,hfe=120to240,TO-126IS 制造商:Toshiba 功能描述:Trans GP BJT NPN 120V 1A 3-Pin TO-126IS
2SC3422-Y(Q) 制造商:Toshiba 功能描述:NPN Bulk
2SC3423-O(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 150V 0.05A 3-Pin TO-126IS
2SC3423-Y(Q) 功能描述:兩極晶體管 - BJT Pb-FF TO126 PLS PLN-N,ACTIVE, RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2