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參數(shù)資料
| 型號(hào)： | 2SC3421-O |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-8H1A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 119K |
| 代理商： | 2SC3421-O |
2SC3421
2004-07-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3421
Audio Frequency Power Amplifier Applications
Complementary to 2SA1358
Suitable for driver of 60 to 80 watts audio amplifier
High breakdown voltage
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Base current
IB
100
mA
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 120 V, IE = 0
―
100
nA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
120
―
V
DC current gain
hFE
(Note)
VCE = 5 V, IC = 100 mA
80
―
240
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 50 mA
―
0.30
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 500 mA
―
0.78
1.0
V
Transition frequency
fT
VCE = 5 V, IC = 100 mA
―
120
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
15
―
pF
Note: hFE classification O: 80 to 160, Y: 120 to 240
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3421 | 1 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 2SC3422-Y | 3 A, 40 V, NPN, Si, POWER TRANSISTOR |
| 2SC3422-O | 3 A, 40 V, NPN, Si, POWER TRANSISTOR |
| 2SC3422O | 3 A, 40 V, NPN, Si, POWER TRANSISTOR |
| 2SC3422 | 3 A, 40 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3421-O(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC3421-Y(Q) | 制造商:Toshiba 功能描述:NPN Bulk 制造商:Toshiba America Electronic Components 功能描述:Tr.,NPN,120V/1A,hfe=120to240,TO-126IS 制造商:Toshiba 功能描述:Trans GP BJT NPN 120V 1A 3-Pin TO-126IS |
| 2SC3422-Y(Q) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SC3423-O(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 150V 0.05A 3-Pin TO-126IS |
| 2SC3423-Y(Q) | 功能描述:兩極晶體管 - BJT Pb-FF TO126 PLS PLN-N,ACTIVE, RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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