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參數(shù)資料
| 型號： | 2SC3357RH |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 |
| 中文描述： | 晶體管|晶體管|叩| 12V的五（巴西）總裁| 100mA的一（c）|至243 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 77K |
| 代理商： | 2SC3357RH |
SILICON TRANSISTOR
2SC3357
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DATA SHEET
Document No. P10357EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
1985
DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristic.
FEATURES
Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 8.0 dB TYP. @V
CE
= 10 V,
I
C
= 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., G
a
= 9.0 dB TYP. @V
CE
= 10 V,
I
C
= 40 mA, f = 1.0 GHz
Large P
T
in Small Package
P
T
: 2 W with 16 cm
2
×
0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Thermal Resistance
Junction Temperature
Storage Temperature
* mounted on 16 cm
V
CBO
V
CEO
V
EBO
I
C
P
T
*
R
th(j-a)
*
T
j
T
stg
20
12
3.0
100
1.2
62.5
150
V
V
V
mA
W
°
C/W
°
C
°
C
65 to +150
2
×
0.7 mm Ceramic Substrate
PACKAGE DIMENSIONS
(Unit: mm)
Term, Connection
E
C
B
(SOT-89)
: Emitter
: Collector (Fin)
: Base
0.41
0.03
+0.05
0.47
±0.06
0.42±0.06
4.5±0.1
1.6±0.2
3.0
E
B
C
1.5
0
2
4
1.5±0.1
0.42
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|---|---|
| 2SC3359S | Power Transistor (80V, 0.3A) |
| 2SC3360 | HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
| 2SC3374 | VHF AMPLIFIER VHF TV TUNER RF AMPLIFIER |
| 2SC3380 | ECONOLINE: RSZ/P - 1kVDC |
| 2SC3382 | ECONOLINE: RSZ/P - 1kVDC |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3357-T1 | 制造商:NEC Electronics Corporation 功能描述:UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3357-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,12V,0.1A,P-MiniMold3 制造商:Renesas 功能描述:NPN EPITAXIAL SILICON RF TRANSISTOR |
| 2SC3357-T1-A-RE | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3357-T1-A-RF | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3357-T1-RF-A | 功能描述:SAME AS NE85634 NPN SILICON MEDI 制造商:cel 系列:- 包裝:帶卷（TR） 零件狀態(tài):新產(chǎn)品 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:12V 頻率 - 躍遷:6.5GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.8dB @ 1GHz 增益:10dB 功率 - 最大值:1.2W 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 20mA，10V 電流 - 集電極（Ic）（最大值）:100mA 安裝類型:表面貼裝 封裝/外殼:TO-243AA 供應商器件封裝:SOT-89 標準包裝:1,000 |
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