參數(shù)資料
型號(hào)： 2SC3357RE
廠商： NEC Corp.
英文描述： TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243
中文描述： 晶體管|晶體管|叩| 12V的五（巴西）總裁| 100mA的一（c）|至243
文件頁數(shù)： 1/8頁
文件大?。?/td> 77K
代理商： 2SC3357RE
SILICON TRANSISTOR
2SC3357
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DATA SHEET
Document No. P10357EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
1985
DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristic.
FEATURES
Low Noise and High Gain
NF = 1.1 dB TYP., G
a
= 8.0 dB TYP. @V
CE
= 10 V,
I
C
= 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., G
a
= 9.0 dB TYP. @V
CE
= 10 V,
I
C
= 40 mA, f = 1.0 GHz
Large P
T
in Small Package
P
T
: 2 W with 16 cm
2
×
0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Thermal Resistance
Junction Temperature
Storage Temperature
* mounted on 16 cm
V
CBO
V
CEO
V
EBO
I
C
P
T
*
R
th(j-a)
*
T
j
T
stg
20
12
3.0
100
1.2
62.5
150
V
V
V
mA
W
°
C/W
°
C
°
C
65 to +150
2
×
0.7 mm Ceramic Substrate
PACKAGE DIMENSIONS
(Unit: mm)
Term, Connection
E
C
B
(SOT-89)
: Emitter
: Collector (Fin)
: Base
0.41
0.03
+0.05
0.47
±0.06
0.42±0.06
4.5±0.1
1.6±0.2
3.0
E
B
C
1.5
0
2
4
1.5±0.1
0.42
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC3357RF 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243
2SC3357RH 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243
2SC3357-T1 制造商:NEC Electronics Corporation 功能描述:UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3357-T1-A 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,12V,0.1A,P-MiniMold3 制造商:Renesas 功能描述:NPN EPITAXIAL SILICON RF TRANSISTOR
2SC3357-T1-A-RE 制造商:Renesas Electronics Corporation 功能描述:
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