參數(shù)資料
型號: 2SC3357-T1-A
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: POWER, MINIMOLD PACKAGE-3
文件頁數(shù): 4/8頁
文件大?。?/td> 86K
代理商: 2SC3357-T1-A
Data Sheet PU10211EJ01V0DS
4
2SC3357
90
100
80
70
60
40
50
30
20
30
40
50
60
70
Collector Current IC (mA)
IM2, IM3 vs. COLLECTOR CURRENT
2nd
Order
Intermodulation
Distortion
IM
2(dBc)
3rd
Order
Intermodulation
Distortion
IM
3(dBc)
IM2
IM3
VCE = 10 V
Vo = 100 dB V/50
Rg = Re = 50
IM2 : f = 90 + 100 MHz
IM3 : f = 2 × 200 – 190 MHz
7
0
1
2
3
4
5
6
0.5
1
5
10
50 70
Collector Current IC (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise
Figure
NF
(dB)
VCE = 10 V
f = 1 GHz
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→ [Device Parameters]
URL http://www.csd-nec.com/
相關(guān)PDF資料
PDF描述
2SC3357-RE-A UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3357-RF-A UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC3380ASUL 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3380AS 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3380ASUR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC3357-T1-A-RE 制造商:Renesas Electronics Corporation 功能描述:
2SC3357-T1-A-RF 制造商:Renesas Electronics Corporation 功能描述:
2SC3357-T1-RF-A 功能描述:SAME AS NE85634 NPN SILICON MEDI 制造商:cel 系列:- 包裝:帶卷(TR) 零件狀態(tài):新產(chǎn)品 晶體管類型:NPN 電壓 - 集射極擊穿(最大值):12V 頻率 - 躍遷:6.5GHz 噪聲系數(shù)(dB,不同 f 時的典型值):1.8dB @ 1GHz 增益:10dB 功率 - 最大值:1.2W 不同?Ic,Vce?時的 DC 電流增益(hFE)(最小值):50 @ 20mA,10V 電流 - 集電極(Ic)(最大值):100mA 安裝類型:表面貼裝 封裝/外殼:TO-243AA 供應(yīng)商器件封裝:SOT-89 標準包裝:1,000
2SC3357-T2 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
2SC3357-TI 制造商:UNKNOWN 功能描述:2SC3357-TI