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參數(shù)資料
| 型號： | 2SC3357-T1-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | POWER, MINIMOLD PACKAGE-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 86K |
| 代理商： | 2SC3357-T1-A |
Data Sheet PU10211EJ01V0DS
3
2SC3357
TYPICAL CHARACTERISTICS (TA = +25
°°°°C, unless otherwise specified)
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
50
100
10
20
15
10
0.5
50
VCE = 10 V
2
1
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(W)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ceramic substrate
16 cm2
× 0.7 mm (t)
Free air Rth (j-a) 312.5C/W
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
1
0.5
0.3
0.5
0.2
1
2
5
10
30
20
f = 1 MHz
VCE = 10 V
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
3
2
5
0.2
0.3
0.5
1
0.1
1
5
10
50
0.1
0.5
100
VCE = 10 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
15
10
0
5
0.5
1
10
50
570
VCE = 10 V
IC = 20 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
25
15
20
5
10
0
0.05
0.1
0.5
1
0.2
2
MAG
|S21e|
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC3357-RE-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3357-RF-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3380ASUL | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3380AS | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3380ASUR | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3357-T1-A-RE | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3357-T1-A-RF | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3357-T1-RF-A | 功能描述:SAME AS NE85634 NPN SILICON MEDI 制造商:cel 系列:- 包裝:帶卷（TR） 零件狀態(tài):新產(chǎn)品 晶體管類型:NPN 電壓 - 集射極擊穿（最大值）:12V 頻率 - 躍遷:6.5GHz 噪聲系數(shù)（dB，不同 f 時的典型值）:1.8dB @ 1GHz 增益:10dB 功率 - 最大值:1.2W 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:50 @ 20mA，10V 電流 - 集電極（Ic）（最大值）:100mA 安裝類型:表面貼裝 封裝/外殼:TO-243AA 供應(yīng)商器件封裝:SOT-89 標準包裝:1,000 |
| 2SC3357-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
| 2SC3357-TI | 制造商:UNKNOWN 功能描述:2SC3357-TI |
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