參數(shù)資料
型號: 2SC3356R23
廠商: NEC Corp.
英文描述: SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
中文描述: 晶體管|晶體管|叩| 12V的五(巴西)總裁| 100mA的一(c)|的SOT - 346
文件頁數(shù): 2/8頁
文件大小: 102K
代理商: 2SC3356R23
2
2SC3356
TYPICAL CHARACTERISTICS (T
A
= 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0
10
20
50
100
200
50
1
5
10
50
0.5
100
150
T
A
-Ambient Temperature-
°
C
I
C
-Collector Current-mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
P
T
-
h
F
-
V
CE
= 10 V
0
0.5
5
10
15
1
5
10
50 70
I
C
-Collector Current-mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|
2
|
2
-
V
CE
= 10 V
f = 1.0 GHz
0.3
0.5
1
2
0
0.5
1
2
5
10
20
30
V
CB
-Collector to Base Voltage-V
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
C
r
-
f = 1.0 MHz
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
0
0.5 1.0
I
C
-Collector Current-mA
10
5.0
30
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
f
T
-
V
CE
= 10 V
0
10
20
0.1
0.2
0.4
0.6 0.81.0
2
f-Frequency-GHz
INSERTION GAIN, MAXIMUM GAIN
vs. FREQUENCY
G
m
-
|
2
|
2
-
V
CE
= 10 V
I
C
= 20 mA
G
max
|S
21e
|
2
Free Air
相關PDF資料
PDF描述
2SC3356R24 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
2SC3356R25 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
2SC3356S TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
2SC3356 Microwave Low Noise NPN Transistor(微波低噪聲NPN晶體管)
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相關代理商/技術參數(shù)
參數(shù)描述
2SC3356R24 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SC3356R25 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
2SC3356S 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | SOT-346
2SC3356-T1B 制造商:NEC Electronics Corporation 功能描述: 制造商:NEC Electronics Corporation 功能描述:2SC3356-T1B
2SC3356-T1B-A 制造商:Renesas Electronics Corporation 功能描述:RF TRANSISTOR 制造商:Renesas Electronics 功能描述:Trans GP BJT NPN 12V 0.1A 3-Pin Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,12V,0.1A,MiniMold3 制造商:Renesas 功能描述:Trans GP BJT NPN 12V 0.1A 3-Pin Mini-Mold T/R