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參數(shù)資料
| 型號(hào)： | 2SC3052-SOT-23-3L |
| 廠商： | 江蘇長(zhǎng)電科技股份有限公司 |
| 英文描述： | TRANSISTOR (NPN) |
| 中文描述： | 晶體管（NPN）的 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 40K |
| 代理商： | 2SC3052-SOT-23-3L |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
2SC3052
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM
: 0.15 W (Tamb=25
℃
)
Collector current
I
CM
: 0.2 A
Collector-base voltage
V
(BR)CBO
: 50 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
℃
to +150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=100
μ
A, I
E
=0
50
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= 100
μ
A, I
B
=0
50
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=100
μ
A, I
C
=0
6
V
Collector cut-off current
I
CBO
V
CB
=50 V , I
E
=0
0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
= 6V , I
C
=0
0.1
μ
A
h
FE(1)
V
CE
=6V, I
C
=1mA
150
800
DC current gain
h
FE(2)
V
CE
=6V, I
C
=0.1mA
50
Collector-emitter saturation voltage
V
CE(sat)
I
C
=100 mA, I
B
=10mA
0.3
V
Base-emitter saturation voltage
V
BE(sat)
I
C
=100mA, I
B
=10mA
1
V
Transition frequency
f
T
V
CE
=6V, I
C
= 10mA
180
MHz
CLASSIFICATION OF h
FE
(1)
Marking
LE
LF
LG
Range
150-300
250-500
400-800
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
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參數(shù)描述 |
|---|---|
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