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參數(shù)資料
| 型號(hào)： | 2SC3114 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | NPN Epitaxial Planar Silicon Transistors for High-VEBO, AF Amp Applications(用于高發(fā)射級(jí)電壓，AF放大器應(yīng)用的NPN硅外延平面型晶體管) |
| 中文描述： | 瑞展硅晶體管的高VEBO，自動(dòng)對(duì)焦放大器應(yīng)用（用于高發(fā)射級(jí)電壓，自動(dòng)對(duì)焦放大器應(yīng)用的npn型硅外延平面型晶體管） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | 2SC3114 |
71598HA (KT)/3257AT/8253KI, TS (KOTO) No.1047-1/4
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1246/2SC3114
High-V
EBO
, AF Amp Applications
Ordering number:EN1047B
( ) : 2SA1246
Specifications
Absolute Maximum Ratings
at Ta = 25C
Electrical Characteristics
at Ta = 25C
Package Dimensions
unit:mm
2003A
[2SA1246/2SC3114]
Features
· High V
EBO
.
· Wide ASO and highly resistant to breakdown.
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* : The 2SA1246/2SC3114 are classified as follows according to h
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JEDEC:TO-92
EIAJ:SC-43
SANYO:NP
B:Base
C:Collector
E:Emitter
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