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參數資料
| 型號： | 2SC2885 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING |
| 中文描述： | NPN硅外延晶體管高壓高速開關 |
| 文件頁數： | 2/6頁 |
| 文件大?。?/td> | 128K |
| 代理商： | 2SC2885 |
Data Sheet D16135EJ2V0DS
2
2SC2885, 2946, 2946(1)
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
= 1.0 A, I
B
= 0.1 A, L = 500
μ
H*
200
V
Collector to emitter voltage
V
CEX(SUS)
I
C
= 1.0 A, I
B1
=
I
B2
= 0.1 A*
Ta = 125
°
C, L = 180
μ
H, clamped
200
V
Collector cutoff current
I
CBO
V
CB
= 250 V, I
E
= 0
10
μ
A
Collector cutoff current
I
CEX1
V
CE
= 250 V, V
BE(OFF)
=
1.5 V
10
μ
A
Collector cutoff current
I
CEX2
V
CE
= 250 V, V
BE(OFF)
=
1.5 V, Ta = 125
°
C
1.0
mA
Emitter cutoff current
I
EBO
V
EB
= 5.0 V, I
C
= 0
1.0
μ
A
h
FE1
V
CE
= 5.0 V, I
C
= 0.1 A*
20
60
160
DC current gain
h
FE2
V
CE
= 5.0 V, I
C
= 1.0 A*
15
Collector saturation voltage
V
CE(sat)
I
C
= 1.0 A, I
B
= 0.1 A*
1.0
V
Base saturation voltage
V
BE(sat)
I
C
= 1.0 A, I
B
= 0.1 A*
1.5
V
Turn-on time
t
on
1.0
μ
s
Storage time
t
stg
2.0
μ
s
Fall time
t
f
I
C
= 1.0 A, R
L
= 100
I
B1
=
I
B2
= 0.1 A, V
CC
100 V
Refer to the test circuit.
1.0
μ
s
* Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
N
M
L
K
h
FE1
20 to 50
30 to 70
50 to 100
80 to 160
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Collector (fin)
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