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參數(shù)資料
| 型號(hào)： | 2SC2885L |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-251AA |
| 中文描述： | 晶體管|晶體管| npn型| 200伏五（巴西）總裁|甲一（c）|至251AA |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 128K |
| 代理商： | 2SC2885L |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D16135EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SC2885, 2946, 2946(1)
NPN SILICON
EPITAXIAL
TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
DATA SHEET
The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small
package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC
converters and switching regulators.
There are three types of transistors selectable according to the reliability requirments: 2SC2946 and 2946(1) for
industrial use, 2SC2885 for general use. The 2SC2946(1) is produced with leads so as to enable mounting directly in
a hybrid IC.
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
330
V
Collector to emitter voltage
V
CEO
200
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
2.0
A
Collector current (pulse)
I
C(pulse)
*
4.0
A
Base current (DC)
I
B(DC)
1.0
A
Total power dissipation
P
T
(Tc = 25
°
C)
15
W
Total power dissipation
P
T
(Ta = 25
°
C)
600
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
300
μ
s, duty cycle
≤
10%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC2885M | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC2885N | TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 2A I(C) | TO-251AA |
| 2SC2901 | NPN SILICON TRANSISTOR |
| 2SC2901K | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 2SC2901L | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2898 | 制造商:n/a 功能描述:2SC2898 TO220 N9H1D 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC2899V | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC2900 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR MT100350V 4A 90W BCE |
| 2SC2901-A-K | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC2901KL1 | 制造商:n/a 功能描述:2SC2901 |
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