參數(shù)資料
型號(hào): 2SC2776
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial Planar
中文描述: 硅瑞展
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 24K
代理商: 2SC2776
2SC2776
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
30
V
Collector to emitter voltage
20
V
Emitter to base voltage
4
V
Collector current
30
mA
Collector power dissipation
100
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
4
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE
*
1
V
CE(sat)
0.5
μ
A
V
CB
= 10 V, I
E
= 0
V
CE
= 6 V, I
C
= 1 mA
I
C
= 10 mA, I
B
= 1 mA
DC current transfer ratio
35
200
Collector to emitter saturation
voltage
0.8
1.2
V
Collector output capacitance
Cob
1.1
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 6 V, I
C
= 1 mA
V
= 6 V, I
= 1 mA,
f = 100 MHz, R
g
= 50
V
= 6 V, I
= 1 mA,
f = 100 MHz, R
=
100
,
R
L
= 550
, Unneutralized
Gain bandwidth product
f
T
NF
320
MHz
Noise figure
5.5
dB
Power gain
PG
17
dB
Note:
Grade
1. The 2SC2776 is grouped by h
FE
as follows.
A
B
C
Mark
VA
VB
VC
h
FE
35 to 70
60 to 120
100 to 200
See characteristic curves of 2SC1342.
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