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參數(shù)資料
| 型號： | 2SC2671 |
| 廠商： | Panasonic Corporation |
| 英文描述： | Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
| 中文描述： | npn型硅外延龍門類型（UHF頻段低噪聲放大） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 37K |
| 代理商： | 2SC2671 |
1
Transistor
2SC2671(F)
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
s Features
q
Low noise figure NF.
q
High gain.
q
High transition frequency fT.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
JEDEC:TO–92
EIAJ:SC–43A
5.0
±0.2
4.0
±0.2
5.1
±0.2
13.5
±0.5
0.45
+0.2
–0.1
0.45
+0.2
–0.1
1.27
2.3
±0.2
2.54
±0.15
2
13
Symbol
VCBO
VCER
*
VEBO
IC
PC
Tj
Tstg
Ratings
15
14
2
80
600
150
–55 ~ +150
Unit
V
mA
mW
C
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
Second inter modulation distortion
Third inter modulation distortion
Symbol
ICBO
IEBO
hFE
fT
*
Cob
*
| S21e |
2
GUM*
NF*
IM2
*
IM3
*
Conditions
VCB = 10V, IE = 0
VEB = 1V, IC = 0
VCE = 8V, IC = 40mA
VCE = 8V, IC = 40mA, f = 800MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 8V, IC = 40mA, f = 800MHz
VCE = 8V, IC = 40mA, f1 = 200MHz
f2 = 500MHz, VO = 100dB/75
VCE = 8V, IC = 40mA, f1 = 600MHz
f2 = 500MHz, VO = 100dB/75
min
50
3.5
9
10
50
75
typ
150
5.5
0.8
12
13
2.0
60
86
max
1
300
1.5
15
3.2
Unit
A
GHz
pF
dB
*REB = 1k
*LTPD = 10%
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