參數(shù)資料
型號(hào): 2SC2717
元件分類: 小信號(hào)晶體管
英文描述: 50 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: 2-5F1E, SC-43, 3 PIN
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 139K
代理商: 2SC2717
2SC2216,2SC2717
2003-03-27
1
TOSHIBA Transistor
Silicon NPN Epitaxial Planar Type
2SC2216,2SC2717
TV Final Picture IF Amplifier Applications
High gain: Gpe = 33dB (typ.) (f = 45 MHz)
Good linearity of hFE.
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
2SC2216
50
Collector-base voltage
2SC2717
VCBO
30
V
2SC2216
45
Collector-emitter
voltage
2SC2717
VCEO
25
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
50
mA
Emitter current
IE
-50
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
2SC2216
VCB = 50 V, IE = 0
Collector cut-off current
2SC2717
ICBO
VCB = 30 V, IE = 0
0.1
mA
Emitter cut-off current
IEBO
VEB = 3 V, IC = 0
0.1
mA
2SC2216
45
Collector-emitter
breakdown voltage
2SC2717
V (BR) CEO
IC = 10 mA, IB = 0
25
V
2SC2216
40
140
DC current gain
2SC2717
hFE
VCE = 12.5 V, IC = 12.5 mA
40
240
Collector-emitter saturation voltage
VCE (sat)
IC = 15 mA, IB = 1.5 mA
0.2
V
Base-emitter saturation voltage
VBE (sat)
IC = 15 mA, IB = 1.5 mA
1.5
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 30 MHz
0.8
2.0
pF
Collector-base time constant
Ccrbb’
VCB = 10 V, IE = -1 mA, f = 30 MHz
25
ps
Transition frequency
fT
VCE = 12.5 V, IC = 12.5 mA
300
MHz
2SC2216
29
36
Power gain (Figure 1)
2SC2717
Gpe
VCC = 12.5 V, IE = -12.5 mA,
f
= 45 MHz
28
36
dB
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1E
Weight: 0.21 g (typ.)
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