參數(shù)資料
型號: 2SC2570A
廠商: NEC Corp.
英文描述: HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
中文描述: 高頻低噪聲放大器NPN硅外延晶體管
文件頁數(shù): 1/8頁
文件大?。?/td> 119K
代理商: 2SC2570A
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NPN SILICON TRANSISTOR
2SC2570A
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Document No. P10404EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
Printed in Japan
DATA SHEET
1980, 1999
DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.
FEATURES
Low noise and high gain
Wide dynamic range
: NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, V
CE
= 10 V, I
C
= 5.0 mA
: NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, V
CE
= 10 V, I
C
= 15 mA
ORDERING INFORMATION
Part Number
Quantity
2SC2570A
Loose products (500 pcs)
2SC2570A-T
Taping products (Box type) (2 500 pcs)
Remark
To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).
ABSOLUTE MAXIMUM RATINGS (T
A
= +25 °C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
25
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
70
mA
Total Power Dissipation
P
tot
600
mW
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
–65 to +150
°C
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