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參數(shù)資料
| 型號(hào)： | 2SC2570A(NE02132) |
| 廠商： | NEC Corp. |
| 英文描述： | Discrete |
| 中文描述： | 離散 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | 2SC2570A(NE02132) |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
NPN SILICON TRANSISTOR
2SC2570A
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Document No. P10404EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
Printed in Japan
DATA SHEET
1980, 1999
DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.
FEATURES
Low noise and high gain
Wide dynamic range
: NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, V
CE
= 10 V, I
C
= 5.0 mA
: NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, V
CE
= 10 V, I
C
= 15 mA
ORDERING INFORMATION
Part Number
Quantity
2SC2570A
Loose products (500 pcs)
2SC2570A-T
Taping products (Box type) (2 500 pcs)
Remark
To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).
ABSOLUTE MAXIMUM RATINGS (T
A
= +25 °C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
25
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
70
mA
Total Power Dissipation
P
tot
600
mW
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
–65 to +150
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2570A-T | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC2577 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC2578 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC2579 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC2580 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
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