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參數資料
| 型號： | 2SC2570A-T |
| 廠商： | NEC Corp. |
| 英文描述： | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 中文描述： | 高頻低噪聲放大器NPN硅外延晶體管 |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 119K |
| 代理商： | 2SC2570A-T |
Data Sheet P10404EJ3V0DS00
2
2SC2570A
ELECTRICAL CHARACTERISTICS (T
A
= +25 °C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Current Gain
h
FE
Note 1
V
CE
= 10 V, I
C
= 20 mA
40
–
200
–
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
C
= 20 mA
–
5.0
–
GHz
Output Capacitance
C
Ob
Note 2
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
–
0.7
0.9
pF
Insertion Power Gain
|
S
21e
|
2
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
8
10
–
dB
Noise Figure
NF
V
CE
= 10 V, I
C
= 5 mA, f = 1.0 GHz
–
1.5
3.0
dB
Maximum Available Gain
MAG
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
–
11.5
–
dB
Collector Cutoff Current
I
CBO
V
CB
= 15 V, I
E
= 0
–
–
0.1
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 2.0 V, I
C
= 0
–
–
0.1
μ
A
Notes 1.
Pulse Measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
The emitter and case terminal should be connected to the guard terminal of the capacitance bridge.
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