參數(shù)資料
型號: 2SC1815L
廠商: Toshiba Corporation
英文描述: FILTER PLATE
中文描述: 晶體管(音頻電壓,低噪聲放大器應(yīng)用)
文件頁數(shù): 1/4頁
文件大?。?/td> 142K
代理商: 2SC1815L
2SC1815(L)
2003-03-27
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815(L)
Audio Frequency Voltage Amplifier Applications
Low Noise Amplifier Applications
High breakdown voltage, high current capability
: V
CEO
= 50 V (min), I
C
= 150 mA (max)
Excellent linearity of h
FE
: h
FE (2)
= 100 (typ.) at V
CE
= 6 V, I
C
= 150 mA
: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
Low noise: NF = 0.2dB (typ.) (f = 1 kHz).
Complementary to 2SA1015 (L). (O, Y, GR class).
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
60
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
150
mA
Base current
I
B
50
mA
Collector power dissipation
P
C
400
mW
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
60 V, I
E
0
0.1
A
Emitter cut-off current
I
EBO
V
EB
5 V, I
C
0
0.1
A
h
FE (1)
(Note)
V
CE
6 V, I
C
2 mA
70
700
DC current gain
h
FE (2)
V
CE
6 V, I
C
150 mA
25
100
Collector-emitter
V
CE (sat)
I
C
100 mA, I
B
10 mA
0.1
0.25
Saturation voltage
Base-emitter
V
BE (sat)
I
C
100 mA, I
B
10 mA
1.0
V
Transition frequency
f
T
V
CE
10 V, I
C
1 mA
80
MHz
Collector output capacitance
C
ob
V
CB
10 V, I
E
0, f 1 MHz
2.0
3.5
pF
Base intrinsic resistance
r
bb’
V
CE
10 V, I
E
1 mA, f 30 MHz
50
NF (1)
V
CE
6 V, I
C
0.1 mA
R
G
10 k
f 100 Hz
0.5
6
Noise figure
NF (2)
V
CE
6 V, I
C
0.1 mA
R
G
10 k
f 1 kHz
0.2
3
dB
Note: h
FE (1)
classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
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