參數(shù)資料
型號(hào)： 2SC1846
廠商： PANASONIC CORP
元件分類： 功率晶體管
英文描述： Silicon NPN epitaxial planar type
中文描述： 1 A, 35 V, NPN, Si, POWER TRANSISTOR, TO-126
封裝： ROHS COMPLIANT, TO-126B-A1, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 93K
代理商： 2SC1846
Power Transistors
2SC1846
Silicon NPN epitaxial planar type
1
Publication date: February 2003
SJD00094BED
For medium output power amplification
Complementary to 2SA0885
■
Features
Low collector-emitter saturation voltage V
CE(sat)
Output of 3 W can be obtained by a complementary pair with
2SA0885
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
3.2
±
0.2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
I
C
=
1 mA, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
20 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
10 V, I
C
=
500 mA
V
CE
=
5 V, I
C
=
1 A
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
45
V
Collector-emitter voltage (Base open)
35
V
Collector-base cutoff current (Emitter open)
I
CBO
0.1
μ
A
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
I
EBO
h
FE1 *
100
Emitter-base cutoff current (Collector open)
10
Forward current transfer ratio
85
340
h
FE2
V
CE(sat)
50
Collector-emitter saturation voltage
0.5
V
Transition frequency
f
T
C
ob
200
MHz
Collector output capacitance
(Common base, input open circuited)
20
pF
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
8.0
+0.5
1
±
0
3
±
0
3
±
0
1
±
0
1
±
1
0.75
±
0.1
0.5
±
0.1
2.3
±
0.2
4.6
±
0.2
0.5
±
0.1
1.76
±
0.1
1
2
3
φ
3.16
±
0.1
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
45
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
35
V
Emitter-base voltage (Collector open)
5
V
Collector current
I
C
1
A
Peak collector current
I
CP
P
C
1.5
A
Collector power dissipation
1.2
W
5.0
*
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Note)*: With a 100
×
100
×
2 mm Al heat sink
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2SC18460S 功能描述:TRANS NPN HF 35VCEO 1A TO-126 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SC1846Q 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 1A I(C) | TO-126
2SC1846R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 1A I(C) | TO-126
2SC1846S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 1A I(C) | TO-126
2SC1847 制造商:DISCRETE SEMI 功能描述:
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