參數(shù)資料
型號(hào): 2SC1651STPQ
元件分類: 小信號(hào)晶體管
英文描述: 30 mA, 210 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SPT, 3 PIN
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 65K
代理商: 2SC1651STPQ
2SC1651S
Transistors
Rev.A
2/2
Electrical characteristics curves
Fig.1 Ground emitter propagation characteristics
0
0.1
0.2
0.5
1
2
5
10
20
0.2
0.4
0.6
0.8
1.0
1.2
1.4
COLLECTOR
CURRENT
:
Ic(mA)
BASE TO EMITTER VOLTAGE : VBE (V)
Ta
=25
°C
VCE
=5V
Fig.2 Ground emitter output characteristics
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
10
20
30
40
50
0
10
20
150A
135A
120A
105A
90
A
75
A
60
A
30
A
15
A
IB=0
A
Ta
=25
°C
45
A
Pc=250mW
Fig.3 DC current gain vs. collector current
0.1 0.2
0.5
12
5
10
20
50
100
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC (mA)
50
100
200
500
Ta
=25
°C
VCE
=10V
Fig.4 Collector-emitter saturation voltage
vs. collector current
0.1 0.2
0.5
1
2
5
10
20
50
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC (mA)
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
Ta
=25
°C
IC/IB
=10
Fig.5 Gain bandwidth product
vs. emitter current
0.5
1
2
5
10
20
TRANSITION
FREQUENCY
:
f
T
(MHz)
EMITTER CURRENT : IE (mA)
50
100
200
Ta
=25
°C
VCE
=5V
Fig.6 Collector output capacitance
vs. collector-base voltage
0.5
1
2
5
10
20
50
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
COLLECTOR TO BASE VOLTAGE : VCB (V)
10
5
50
Ta
=25
°C
f
=1MHz
IE
=0A
Fig.7 Emitter input capacitance
vs. emitter-base voltage
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
EMITTER TO BASE VOLTAGE : VEB (V)
0.5
1
2
5
10
20
50
10
20
5
50
100
Ta
=25
°C
f
=1MHz
IC
=0A
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