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參數(shù)資料
| 型號(hào)： | 2SC1651STP/Q |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 30 mA, 210 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SPT, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | 2SC1651STP/Q |
2SC1651S
Transistors
Rev.A
1/2
High-voltage Amplifier Transistor (210V, 30mA)
2SC1651S
Features
1) High breakdown voltage, (VCER = 210V )
2) Complements the 2SA821S.
External dimensions (Unit : mm)
Taping specifications
SPT
0.45
2.5
(1) (2) (3)
(15Min.)
5.0
3.0
3Min.
0.45
0.5
4.0
2.0
(1)Emitter
(2)Collector
(3)Base
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
210
5
30
250
150
55 to +150
Unit
V
V
A
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
RBE=10k
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
210
5
82
60
6
1
270
V
A
V
MHz
pF
IC
=50A
IC
=100mA, RBE=10k
IE
=50A
VCB
=150V
VEB
=4.5V
IC/IB
=2mA/0.2mA
hFE
1
VCE
=3V, IC=5A
VCE
=5V , IE= 2mA , f=30MHz
VCE
=10V , IE=0A , f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Transition frequency
Output capacitance
DC current transfer ratio
Packaging specifications and hFE
Type
2SC1651S
SPT
PQ
5000
Package
hFE
TP
Code
Basic ordering unit (pieces)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| 2SC1653N2 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:BJT |
| 2SC1653N3 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:BJT |
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