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參數(shù)資料
| 型號(hào)： | 2SC1213D |
| 英文描述： | TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 500MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 35V的五（巴西）總裁| 500mA的一（c）|至92 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 28K |
| 代理商： | 2SC1213D |
2SC1213, 2SC1213A
3
0
200
400
600
50
Ambient Temperature Ta (
°C)
Collector
Power
Dissipation
P
C
(mW)
Maximum Collector Dissipation Curve
100
150
0
20
40
60
80
100
4
2
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
Typical Output Characteristics (1)
68
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 mA
IB = 0
P
C
=
400
mW
0
100
200
300
400
500
4
2
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
Typical Output Characteristics (2)
68
10
2
3
4
5
6
7
8
IB = 0
1 mA
P
C = 400
mW
9
10
0
0.3
1.0
3
10
30
0.4
0.2
Base to Emitter Voltage VBE (V)
Collector
Current
I
C
(mA)
Typical Transfer Characteristics
0.6
0.8
1.0
1.2
VCE = 3 V
Ta
=
75
°C
25
–25
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| 2SC1213DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
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| 2SC1214CTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC1214DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
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