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參數(shù)資料
| 型號： | 2SC1213D |
| 英文描述： | TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 500MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 35V的五（巴西）總裁| 500mA的一（c）|至92 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 28K |
| 代理商： | 2SC1213D |
2SC1213, 2SC1213A
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SC1213
2SC1213A
Unit
Collector to base voltage
V
CBO
35
50
V
Collector to emitter voltage
V
CEO
35
50
V
Emitter to base voltage
V
EBO
44V
Collector current
I
C
500
mA
Collector power dissipation
P
C
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SC1213
2SC1213A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
35
—
50
—
V
I
C = 10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
35
—
50
—
V
I
C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
4—
—
4
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.5
—
0.5
AV
CB = 20 V, IE = 0
DC current tarnsfer ratio h
FE*
1
60
—
320
60
—
320
V
CE = 3 V, IC =10 mA
h
FE
10
—
10
—
V
CE = 3 V,
I
C = 500 mA*
2
Collector to emitter
saturation voltage
V
CE(sat)
—
0.2
0.6
—
0.2
0.6
V
I
C = 150 mA,
I
B = 15 mA*
2
Base to emitter voltage
V
BE
—
0.64
—
0.64
—
V
CE = 3 V, IC = 10 mA
Notes: 1. The 2SC1213 and 2SC1213A are grouped by h
FE as follows.
2. Pulse test
BC
D
60 to 120
100 to 200
160 to 320
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC1213DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC1214 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial Low frequency amplifier |
| 2SC1214C(TZ-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC1214CTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC1214DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
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