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參數(shù)資料
| 型號： | 2SC1162 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 29K |
| 代理商： | 2SC1162 |
2SC1162
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
35
—
—
V
I
C
= 1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
35
—
—
V
I
C
= 10 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
—
—
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
h
FE
*
1
h
FE
—
—
20
μ
A
V
CB
= 35 V, I
E
= 0
V
CE
= 2 V, I
C
= 0.5 A
V
= 2 V, I
C
= 1.5 A
(pulse test)
DC current transfer ratio
60
—
320
20
—
—
Base to emitter voltage
V
BE
—
0.93
1.5
V
V
= 2 V, I
C
= 1.5 A
(pulse test)
Collector to emitter saturation
voltage
V
CE(sat)
—
0.5
1.0
V
I
C
= 2 A, I
B
= 0.2 A (pulse test)
Gain bandwidth product
Note:
1. The 2SC1162 is grouped by h
FE
as follows.
f
T
—
180
—
MHz
V
CE
= 2 V, I
C
= 0.2 A
B
C
D
60 to 120
100 to 200
160 to 320
0.8
0.6
0.4
0.2
0
50
100
150
200
Ambient temperature Ta (
°
C)
C
C
Maximum Collector Dissipation Curve
0.75
2
0.5
0.1
5
20
50
Collector to emitter voltage V
CE
(V)
C
C
Area of Safe Operation
5
1.0
0.2
1
2
10
I
C(max)
(DC Operation)
T
C
= 25
°
C
P
C
=10W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC1162B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 2.5A I(C) | TO-126 |
| 2SC1162C | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC1162D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 2.5A I(C) | TO-126 |
| 2SC1163 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC1164 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 300MA I(C) | TO-72 |
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