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參數(shù)資料
| 型號(hào)： | 2SB905 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1500 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, 2-7J1A, 3 PIN |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 150K |
| 代理商： | 2SB905 |
Data Sheet D11204EJ3V0DS
2
2SB1572
TYPICAL CHARACTERISTICS (TA = 25°C)
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
1000
500
200
100
50
20
10
1
2
5
IC = 20 IB
.
IC - Collector Current - A
V
CE(sat)
-
Collector
Saturation
Voltage
-
mV
0.1
0.02 0.05
0.01
0.2 0.5
10
1
2
5
TA = 125C
75C
25C
0C
25C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
500
300
700
900
1100
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
VBE - Base to Emitter Voltage - mV
IC
-
Collector
Current
-
A
VCE =
2 V
T
A
=
125
C
25
C
0
C
75
C
–
25
C
DC CURRENT GAIN vs. COLLECTOR CURRENT
0.1
0.02 0.05
0.01
0.2 0.5
10
1
2
5
1000
100
10
IC - Collector Current - A
h
FE
-
DC
Current
Gain
VCE =
2 V
TA = 125C
75C
25C
0C
25C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0
0.2
0.4
0.6
0.8
1.0
2.0
1.6
1.2
0.8
0.4
IB =
10 mA
20 mA
30
mA
40
mA
50
mA
VCE - Collector to Emitter Voltage - V
IC
-
Collector
Current
-
A
FORWARD BIAS SAFE OPERATING AREA
5
2
1
10
100
20
50
10
2
5
1
0.5
0.2
0.1
VCE - Collector to Emitter Voltage - V
IC
-
Collector
Current
-
A
TA = 25C
Single Pulse
PW
=
1
ms
10
ms
100
ms
DC
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TA - Ambient Temperature - C
0
120
90
30
150
60
100
80
40
60
20
dT
-
Percentage
of
Rated
Power
-
%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB905_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Amplifier Applications |
| 2SB905_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Amplifier Applications |
| 2SB905O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1.5A I(C) | TO-252AA |
| 2SB905O(SM) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB905-O(TE16L) | 制造商:Toshiba America Electronic Components 功能描述:2SB905-O(TE16L) - Tape and Reel |
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