參數(shù)資料
型號(hào): 2SB905
元件分類: 小信號(hào)晶體管
英文描述: 1500 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, 2-7J1A, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 150K
代理商: 2SB905
2SB905
2010-03-10
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SB905
Power Amplifier Applications
Complementary to 2SD1220
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
150
V
Collector-emitter voltage
VCEO
150
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
1.5
A
Base current
IB
1.0
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
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