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參數(shù)資料
| 型號(hào)： | 2SB860-E |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 139K |
| 代理商： | 2SB860-E |
2SB860
3
Typical Output Characteristics
TC = 25°C
–1.0
–0.8
–0.6
–0.4
–0.2
0–2
–4
Collector to emitter voltage VCE (V)
Collector
current
I
C
(A)
–6
–8
–10
IB = –2 mA
–4
–6
–8
–10
DC Current Transfer Ratio vs.
Collector Current
VCE = –5 V
TC = 75°C
25
–25
1,000
500
200
DC
current
transfer
raito
h
FE
100
50
20
10
–0.01
–0.1
–1.0
–10
–0.03
–0.3
Collector current IC (A)
–3
Collector to Emitter Saturation
Voltage vs. Collector Current
IC = 10 IB
TC = 75°C
25
–25
–10
–3
–1.0
–0.3
–0.1
–0.03
–0.01
–0.1
–1.0
–10
–0.03
–0.3
Collector current IC (A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V)
–3
Base to Emitter Saturation Voltage
vs. Collector Current
IC = 10 IB
–1.5
–1.0
–0.5
0
–0.01
–0.1
–1.0
–10
–0.03
–0.3
Collector current IC (A)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V)
–3
TC =
–25°
C
25
75
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB861C | 2 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB863O | 10 A, 140 V, PNP, Si, POWER TRANSISTOR |
| 2SB874C | 2 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB874B | 2 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB886 | 8 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB861 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 制造商:Hitachi 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
| 2SB861B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SB861C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SB861C-E | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SB862 | 制造商: 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
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