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參數(shù)資料
| 型號(hào)： | 2SB860-E |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 139K |
| 代理商： | 2SB860-E |
2SB860
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–100
—
V
I
C = –10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–4
—
V
I
E = –1 mA, IC = 0
Collector cutoff current
I
CEO
—
–100
AV
CE = –80 V, RBE = ∞
Emitter cutoff current
I
EBO
—
–50
AV
EB = –3.5 V, IC = 0
Collector to emitter saturation
voltage
V
CE(sat)
—
–1.0
V
I
C = –1 A, IB = –0.1 A*
1
DC current transfer ratio
h
FE
50
—
250
V
CE = –4 V
I
C = –0.5 A*
1
25
—
350
I
C = –50 mA
Note:
1. Pulse test
Maximum Collector Dissepation
Curve
60
40
20
050
Collector
power
dissipaition
P
C
(W)
100
Case temperature TC (°C)
150
ICmax
–10
–3
–1.0
–0.3
–0.1
–0.03
–0.01
–1
–10
–100
–1,000
–3
–30
Collector to emitter voltage VCE (V)
–300
TC = 25°C
DC Operation
(–10 V, –4 A)
(–40 V, –1 A)
(–100 V, –50 mA)
Area of Safe Operation
Collector
current
I
C
(A)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB861C | 2 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB863O | 10 A, 140 V, PNP, Si, POWER TRANSISTOR |
| 2SB874C | 2 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB874B | 2 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB886 | 8 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB861 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 制造商:Hitachi 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
| 2SB861B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SB861C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SB861C-E | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SB862 | 制造商: 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
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