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參數(shù)資料
| 型號(hào)： | 2SB859 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused(三倍擴(kuò)散PNP晶體管) |
| 中文描述： | 三重?cái)U(kuò)散硅進(jìn)步黨（三倍擴(kuò)散進(jìn)步黨晶體管） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 32K |
| 代理商： | 2SB859 |
2SB859
2
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
I
C
= –50 mA, R
BE
=
∞
Collector to emitter breakdown
voltage
V
(BR)CEO
–80
—
—
V
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
—
—
–0.1
mA
V
CB
= –80 V, I
E
= 0
V
CE
= –5 V, I
C
= –1 A*
V
CE
= –5 V, I
C
= –0.1 A*
V
CE
= –5 V, I
C
= –1 A*
I
C
= –2 A, I
B
= –0.2 A*
DC current transfer ratio
1
60
—
200
2
35
—
—
2
Base to emitter voltage
—
—
–1.5
V
2
Collector to emitter saturation
voltage
—
—
–2
V
2
Gain bandwidth product
f
T
Cob
—
20
—
MHz
V
CE
= –5 V, I
C
= –0.5 A*
V
CB
= –20 V, I
E
= 0, f = 1 MHz
2
Collector output capacitance
Notes: 1. The 2SB859 is grouped by h
FE1
as follows.
2. Pulse test
—
75
—
pF
B
C
60 to 120
100 to 200
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
C
C
Case temperature T
C
(
°
C)
Area of Safe Operation
IC max(Continuous)
–5
–2
–1.0
–0.5
C
C
–0.2
–0.1
–0.05
–1
–5
–20
–100
–2
–10
–50
(–80 V, –0.06 A)
(–33 V, –12 A)
(–10 V, –4 A)
DCOpeaion
T
C
= 25
°
C
Collector to emitter voltage V
CE
(V)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB859B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB859C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB860 | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SB861 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 制造商:Hitachi 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
| 2SB861B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 2A I(C) | TO-220AB |
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