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參數(shù)資料
| 型號： | 2SB856 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 32K |
| 代理商： | 2SB856 |
2SB856
3
–0.4
–0.8
–1.2
–1.6
–2.0
Collector to emitter Voltage VCE (V)
Collector
Current
I
C
(A)
–2
–4
–6
–8
–10
0
Typical Output Characteristics
IB = 0
TC = 25°C
–2.5 mA
–5
–7.5
–30
–10
–12.5
–17.5
–15
–20
–25
–0.01
–0.03
–0.1
–0.3
–1.0
–3
–10
Base to emitter voltage VBE (V)
Collector
current
I
C
(A)
0
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Typical Transfer Characteristics
VCE = –4 V
T
C
=
75
°C
–25
25
1
3
10
30
100
300
1,000
Collector current IC (A)
DC
current
transfer
ratio
h
FE
–0.01 –0.03
–0.1
–0.3
–1.0
–3
–10
DC Current Transfer Ratio vs.
Collector Current
VCE = –4 V
TC = 75°C
25
–25
Collector to Emitter Saturation
Voltage vs. Collector Current
–0.01
–0.03
–0.1
–0.3
–1.0
–3
–10
Collector current IC (A)
Collector
to
emitter
saturation
voltage
V
CE
(sat)
(V)
–0.01 –0.03
–0.1
–1.0
–3
–10
T C
=
75
°C
25
–25
IC = 10 IB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB857C | 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB857 | 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB857D | 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB858C | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB858D | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB856A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SB856B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SB856C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB |
| 2SB857 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| 2SB857_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR |
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