參數(shù)資料
型號: 2SB856
元件分類: 功率晶體管
英文描述: 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 2/5頁
文件大小: 32K
代理商: 2SB856
2SB856
2
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–50
V
I
C = –5 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–50
V
I
C = –50 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–4
V
I
E = –5 mA, IC = 0
Collector cutoff current
I
CBO
–100
AV
CB = –20 V, IE = 0
DC current transfer ratio
h
FE1*
1
35
200
V
CE = –4 V, IC = –1 A*
2
h
FE2
35
V
CE = –4 V, IC = –0.1 A*
2
Base to emitter voltage
V
BE
——–1.5
V
CE = –4 V, IC = –1 A*
2
Collector to emitter saturation
voltage
V
CE(sat)
——–1.2
V
I
C = –2 A, IB = –0.2 A*
2
Gain bandwidth product
f
T
35
MHz
V
CE = –4 V, IC = –0.5 A*
2
Notes: 1. The 2SB856 is grouped by h
FE1 as follows.
2. Pulse test
AB
C
35 to 70
60 to 120
100 to 200
0
50
100
150
Case Temperature TC (°C)
Collector
power
dissipation
Pc
(W)
Maximum Collector Dissipation Curve
10
20
30
–0.1
–0.2
–0.5
–1.0
–2
–5
–10
Collector to emitter Voltage VCE (V)
Collector
Current
I
C
(A)
–0.5 –1.0
–2
–5
–10
–20
–50
Area of Safe Operation
IC (max) (Continuous)
TC = 25°C
DC
Operation
(–8.4 V, –3 A)
(–23 V, –1.1 A)
(–50 V, –0.25 A)
相關(guān)PDF資料
PDF描述
2SB857C 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB857 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB857D 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB858C 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB858D 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB856A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB
2SB856B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB
2SB856C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3A I(C) | TO-220AB
2SB857 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors
2SB857_09 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON PNP TRANSISTOR