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參數(shù)資料
| 型號(hào)： | 2SB791K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進(jìn)步黨 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 37K |
| 代理商： | 2SB791K |
2SB791(K)
3
Typical Output Characteristics
T
C
= 25
°
C
P
C
5W
I
B
= 0
–3
–0.5 mA
–1.0
–1.5
–2.0
–2.5
–3.0
–3.5
–4.0
–4.5
–10
–8
–6
–4
–2
0
–1
C
C
–2
Collector to emitter voltage V
CE
(V)
–5
–4
DC Current Transfer Ratio vs.
Collector Current
10000
3000
1000
300
100
–0.1
–0.3
Collector current I
C
(A)
D
F
–1.0
–3
–10
V
CE
= –3 V
T
C
=75
°
C
25
°
C
–25
°
C
Saturation Voltage vs.
Collector Current
T
C
= 25
°
C
–10
–5
–2
–1.0
–0.5
C
C
B
B
–0.2
–0.1
–0.1
–0.5
Collector current I
C
(A)
–2
–10
–0.2
–1.0
–5
V
BE(sat)
V
CE(sat)
I
C
/
I
B
= 200
500
200
I
C
/
I
B
= 500
Switching Time vs. Collector Current
S
μ
s
10
3
1.0
0.3
0.1
0.03
0.01
–0.1
–0.3
Collector current I
C
(A)
–1.0
–3
–10
t
f
t
on
t
stg
V
CC
= –30V
I
C
= 500 I
B1
= –500 I
B2
Ta = 25
°
C
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|---|---|
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| 2SB795 | PNP SILICON DARLINGTON POWER TRANSISTORS |
| 2SB798 | PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
| 2SB799 | PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB791K(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB792 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB792A | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) |
| 2SB792AR | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 185V V(BR)CEO | 50MA I(C) | TO-236AB |
| 2SB792AS | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 185V V(BR)CEO | 50MA I(C) | TO-236AB |
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