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參數(shù)資料
| 型號： | 2SB791K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進步黨 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SB791K |
2SB791(K)
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–120
—
—
V
I
C
= –25 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–7
—
—
V
I
E
= –50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)(1)
V
CE(sat)(2)
V
BE(sat)(1)
V
BE(sat)(2)
t
on
t
stg
t
f
—
—
–100
μ
A
μ
A
V
CB
= –120 V, I
E
= 0
V
CE
= –100 V, R
BE
=
∞
V
CE
= –3 V, I
C
= –4 A*
1
I
C
= –4 A, I
B
= –8 mA*
1
I
C
= –8 A, I
B
= –80 mA*
1
I
C
= –4 A, I
B
= –8 mA*
1
I
C
= –8 A, I
B
= –80 mA*
1
I
C
= –4 A, I
B1
= I
B2
= –8 mA
—
—
–10
DC current transfer ratio
1000
—
20000
Collector to emitter saturation
—
—
–1.5
V
voltage
—
—
–3.0
V
Base to emitter saturation
—
—
–2.0
V
voltage
—
—
–3.5
V
Turn on time
—
0.5
—
μ
s
μ
s
μ
s
Storage time
—
1.6
—
Fall time
Note:
—
1.5
—
1. Pulse test
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature T
C
(
°
C)
C
C
Area of Safe Operation
–30
–10
–3
–1.0
–0.3
C
C
–0.1
–0.03
–1
–10
–100
–1,000
–3
–30
–300
Collector to emitter voltage V
CE
(V)
Ta = 25
°
C
1 Shot Pulse
i
C(peak)
1
μ
s
1
μ
s
I
(Continuous)
DCOpeaion
(
C
2
°
C
1m
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|---|---|
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| 2SB795 | PNP SILICON DARLINGTON POWER TRANSISTORS |
| 2SB798 | PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB791K(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB792 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB792A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) |
| 2SB792AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 185V V(BR)CEO | 50MA I(C) | TO-236AB |
| 2SB792AS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 185V V(BR)CEO | 50MA I(C) | TO-236AB |
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