參數(shù)資料
型號: 2SB649A
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial
中文描述: 硅外延進步黨
文件頁數(shù): 5/8頁
文件大?。?/td> 35K
代理商: 2SB649A
2SB649, 2SB649A
5
DC Current Transfer Ratio
vs. Collector Current
350
V
CE
= –5V
Ta = 75
°
C
25
°
C
–25
°
C
350
250
200
150
D
F
100
50
0
–1
–10
–100
–1,000
Collector current I
C
(mA)
Collector to Emitter Saturation
Voltage vs. Collector Current
I
C
= 10 I
B
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0
–1
–10
Collector current I
C
(mA)
–100
–25
25
–1,000
C
V
C
T 5
°
C
Collector current I
C
(mA)
I
C
= 10 I
B
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0
–1
–10
–100
–1,000
B
V
B
Base to Emitter Saturation Voltage
vs. Collector Current
Ta = –25
°
C
25
75
V
CE
= –5 V
Gain Bandwidth Product
vs. Collector Current
240
200
160
120
80
40
0
–10
–30
Collector current I
C
(mA)
G
T
–100
–300
–1,000
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