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參數(shù)資料
| 型號： | 2SB649A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進步黨 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SB649A |
2SB649, 2SB649A
3
Electrical Characteristics
(Ta = 25°C)
2SB649
2SB649A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–180 —
—
–180 —
—
V
I
C
= –1 mA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–120 —
—
–160 —
—
V
I
C
= –10 mA, R
BE
=
∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
—
—
–5
—
—
V
I
E
= –1 mA, I
C
= 0
Collector cutoff current
I
CBO
—
—
–10
—
—
–10
μ
A
V
CB
= –160 V, I
E
= 0
V
CE
= –5 V,
I
C
= –150 mA
V
CE
= –5 V,
I
C
= –500 mA*
2
I
C
= –500 mA,
I
B
= –50 mA
V
CE
= –5 V,
I
C
= –150 mA
V
CE
= –5 V,
I
C
= –150 mA
V
= –10 V, I
E
= 0,
f = 1 MHz
DC current transfer ratio h
FE1
*
1
60
—
320
60
—
200
h
FE2
30
—
—
30
—
—
Collector to emitter
saturation voltage
V
CE(sat)
—
—
–1
—
—
–1
V
Base to emitter voltage
V
BE
—
—
–1.5
—
—
–1.5
V
Gain bandwidth product f
T
—
140
—
—
140
—
MHz
Collector output
capacitance
Notes: 1. The 2SB649 and 2SB649A are grouped by h
FE1
as follows.
2. Pulse test
Cob
—
27
—
—
27
—
pF
B
C
D
2SB649
60 to 120
100 to 200
160 to 320
2SB649A
60 to 120
100 to 200
—
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB649AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SB649A-B-AB3-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A-B-AB3-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A-B-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A-B-T60-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
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