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參數(shù)資料
| 型號： | 2SB649 |
| 英文描述： | TO-126C Plastic-Encapsulated Transistors |
| 中文描述： | 對126C塑料封裝晶體管 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 35K |
| 代理商： | 2SB649 |
2SB649, 2SB649A
4
Maximum Collector Dissipation
Curve
30
20
10
0
50
100
150
Case temperature T
C
(
°
C)
C
C
Area of Safe Operation
I
Cmax
(–13.3 V, –1.5 A)
(–40 V, –0.5 A)
DC Operation (T
C
= 25
°
C)
(–120 V, –0.038 A)
(–160 V, –0.02 A)
2SB649A
2SB649
–3
–1.0
–0.3
–0.1
–0.03
–0.01
–1
–3
–10
Collector to emitter voltage V
CE
(V)
–30
–100
–300
C
C
T
C
= 25
°
C
P
C
=20W
Typical Output Characteristics
–50
–1.0
–0.8
–0.6
–0.4
–0.2
0
–10
–40
–20
I
B
= 0
–0.5 mA
–1.0
–1.5
–2.0
–2.5
–3.5
–40
–.
–30
–50
Collector to emitter voltage V
CE
(V)
C
C
Typical Transfer Characteristics
–500
–100
C
C
–10
–1
0
–0.4
Base to emitter voltage V
BE
(V)
–0.8
–0.2
–0.6
–1.0
V
CE
= –5 V
T
°
C
2
–
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB649A | TO-126C Plastic-Encapsulated Transistors |
| 2SB649A | Silicon PNP Epitaxial |
| 2SB717 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
| 2SB718 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
| 2SB738 | Silicon PNP Epitaxial |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB649_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:PNP Epitaxial Planar Transistors |
| 2SB649AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SB649A-B-AB3-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
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