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參數(shù)資料
| 型號： | 2SB649 |
| 英文描述： | TO-126C Plastic-Encapsulated Transistors |
| 中文描述： | 對126C塑料封裝晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SB649 |
2SB649, 2SB649A
2
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Symbol
2SB649
2SB649A
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
1
Tj
–180
–180
V
Collector to emitter voltage
–120
–160
V
Emitter to base voltage
–5
–5
V
Collector current
–1.5
–1.5
A
Collector peak current
–3
–3
A
Collector power dissipation
1
1
W
20
20
W
Junction temperature
150
150
°
C
°
C
Storage temperature
Note:
1. Value at T
C
= 25
°
C
Tstg
–55 to +150
–55 to +150
相關PDF資料 |
PDF描述 |
|---|---|
| 2SB649A | TO-126C Plastic-Encapsulated Transistors |
| 2SB649A | Silicon PNP Epitaxial |
| 2SB717 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
| 2SB718 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
| 2SB738 | Silicon PNP Epitaxial |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB649_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:PNP Epitaxial Planar Transistors |
| 2SB649AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SB649A-B-AB3-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
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