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參數(shù)資料
| 型號(hào)： | 2SB649 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進(jìn)步黨 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | 2SB649 |
2SB649, 2SB649A
5
DC Current Transfer Ratio
vs. Collector Current
350
V
CE
= –5V
Ta = 75
°
C
25
°
C
–25
°
C
350
250
200
150
D
F
100
50
0
–1
–10
–100
–1,000
Collector current I
C
(mA)
Collector to Emitter Saturation
Voltage vs. Collector Current
I
C
= 10 I
B
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0
–1
–10
Collector current I
C
(mA)
–100
–25
25
–1,000
C
V
C
T 5
°
C
Collector current I
C
(mA)
I
C
= 10 I
B
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
–0
–1
–10
–100
–1,000
B
V
B
Base to Emitter Saturation Voltage
vs. Collector Current
Ta = –25
°
C
25
75
V
CE
= –5 V
Gain Bandwidth Product
vs. Collector Current
240
200
160
120
80
40
0
–10
–30
Collector current I
C
(mA)
G
T
–100
–300
–1,000
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PDF描述 |
|---|---|
| 2SB649 | TO-126C Plastic-Encapsulated Transistors |
| 2SB649A | TO-126C Plastic-Encapsulated Transistors |
| 2SB649A | Silicon PNP Epitaxial |
| 2SB717 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
| 2SB718 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB649_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:PNP Epitaxial Planar Transistors |
| 2SB649AB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SB649A-B-AB3-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
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