參數(shù)資料
型號(hào): 2SB648B
元件分類(lèi): 小信號(hào)晶體管
英文描述: 50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: TO-126MOD, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 35K
代理商: 2SB648B
2SB648, 2SB648A
2
Electrical Characteristics (Ta = 25
°C)
2SB648
2SB648A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–180 —
–180 —
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–120 —
–160 —
V
I
C = –1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
——
–5
——V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
–10
–10
AV
CB = –160 V, IE = 0
DC current transfer
ratio
h
FE1*
1
60
320
60
200
V
CE = –5 V,
I
C = –10 mA
h
FE2
30
30
V
CE = –5 V, IC = –1 mA
Collector to emitter
saturation voltage
V
CE(sat)
——–2
V
I
C = –30 mA,
I
B = –3 mA
Base to emitter voltage V
BE
——–1.5
V
CE = –5 V,
I
C = –10 mA
Gain bandwidth product f
T
140
140
MHz
V
CE = –10 V,
I
C = –10 mA
Collector output
capacitance
Cob
4.5
4.5
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SB648 and 2SB648A are grouped by h
FE1 as follows.
BCD
2SB648
60 to 120
100 to 200
160 to 320
2SB648A
60 to 120
100 to 200
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