參數(shù)資料
型號(hào): 2SB648AC
元件分類(lèi): 小信號(hào)晶體管
英文描述: 50 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: TO-126MOD, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 35K
代理商: 2SB648AC
2SB648, 2SB648A
2
Electrical Characteristics (Ta = 25
°C)
2SB648
2SB648A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–180 —
–180 —
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–120 —
–160 —
V
I
C = –1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
——
–5
——V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
–10
–10
AV
CB = –160 V, IE = 0
DC current transfer
ratio
h
FE1*
1
60
320
60
200
V
CE = –5 V,
I
C = –10 mA
h
FE2
30
30
V
CE = –5 V, IC = –1 mA
Collector to emitter
saturation voltage
V
CE(sat)
——–2
V
I
C = –30 mA,
I
B = –3 mA
Base to emitter voltage V
BE
——–1.5
V
CE = –5 V,
I
C = –10 mA
Gain bandwidth product f
T
140
140
MHz
V
CE = –10 V,
I
C = –10 mA
Collector output
capacitance
Cob
4.5
4.5
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SB648 and 2SB648A are grouped by h
FE1 as follows.
BCD
2SB648
60 to 120
100 to 200
160 to 320
2SB648A
60 to 120
100 to 200
相關(guān)PDF資料
PDF描述
2SB648AB 50 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB648B 50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB648C 50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB686 6 A, 100 V, PNP, Si, POWER TRANSISTOR
2SB698D 700 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB648AD 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:BJT
2SB648B 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-126VAR
2SB648C 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-126VAR
2SB648D 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-126VAR
2SB649 制造商:WEITRON 制造商全稱(chēng):Weitron Technology 功能描述:PNP Epitaxial Planar Transistors