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參數(shù)資料
| 型號(hào)： | 2SB647B |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SB647B |
2SB647, 2SB647A
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SB647
2SB647A
Unit
Collector to base voltage
V
CBO
–120
V
Collector to emitter voltage
V
CEO
–80
–100
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–1
A
Collector peak current
i
C(peak)
–2
A
Collector power dissipation
P
C
0.9
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SB647
2SB647A
Item
Symbol Min
Typ
Max
Min
Typ
Max Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–120 —
—
–120 —
—
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–80
—
–100 —
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
–5
—
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–10
—
–10
AV
CB = –100 V, IE = 0
DC current transfer ratio
h
FE1*
1
60
—
320
60
—
200
V
CE = –5 V,
I
C = –150 mA*
2
h
FE2
30
—
30
—
V
CE = –5 V,
I
C = –500 mA*
2
Collector to emitter
saturation voltage
V
CE(sat)
—
–1
—
–1
V
I
C = –500 mA,
I
B = –50 mA*
2
Base to emitter voltage
V
BE
—
–1.5
—
–1.5 V
V
CE = –5 V,
I
C = –150 mA*
2
Gain bandwidth product
f
T
—
140
—
140
—
MHz V
CE = –5 V, IC = –150 mA
Collector output capacitance Cob
—
20
—
20
—
pF
V
CB = –10 V, IE = 0
f = 1 MHz
Notes: 1. The 2SB647 and 2SB647A are grouped by h
FE1 as follows.
2. Pulse test
BC
D
2SB647
60 to 120
100 to 200
160 to 320
2SB647A
60 to 120
100 to 200
—
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB648 | 50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB648AC | 50 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB648AB | 50 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB648B | 50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB648C | 50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB647C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SＢ647－C | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT PNP 80V 1A 3-Pin TO-92 Mod |
| 2SB647CTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB647D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB647DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
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