參數(shù)資料
型號: 2SB1733LT
元件分類: 小信號晶體管
英文描述: 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: TUMT3, 3 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 105K
代理商: 2SB1733LT
2SB1733
Transistors
Rev.A
2/2
Electrical characteristic curves
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
10
DC
CURRENT
GAIN
:
h
FE
1000
100
Ta
=100°C
Ta
=40°C
Ta
=25°C
VCE
=2V
Pulsed
Fig.1 DC current gain
vs. collector current
0.1
0.01
10
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
BASE
SATURATION
VOLTAGE
:
V
BE
(sat)
(V)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat)
(V)
Ta
=25°C
Ta
=25°C
Ta
=40°C
Ta
=40°C
Ta
=100°C
Ta
=100°C
VBE(sat)
VCE(sat)
IC/IB
=20/1
Pulsed
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
0.001
0.01
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
0.1
1
10
Ta
=25°C
Pulsed
IC/IB
=10/1
IC/IB
=20/1
IC/IB
=50/1
Fig.3 Collector-emitter saturation voltage
vs. collector current
0
0.5
1
1.5
BASE TO EMITTER CURRENT : VBE (V)
0.001
COLLECTOR
CURRENT
:
I
C
(A)
0.01
1
0.1
VCE
=2V
Pulsed
Ta
=100°C
Ta
=25°C
Ta
=40°C
Fig.4 Grounded emitter propagation
characteristics
0.01
0.1
1
EMITTER CURRENT : IE (A)
10
TRANSITION
FREQUENCY
:
f
T
(MHz)
1000
100
Ta
=25°C
VCE
=2V
f
=100MHz
Fig.5 Gain bandwidth product
vs. emitter current
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
1
10
1000
100
Ta
=25°C
VCE
=5V
IC/IB
=20/1
tstg
tdon
tr
tf
Fig.6 Switching time
SWITCHING
TIME
:
(ns)
1
10
100
0.1
1
10
100
f
=1MHz
IC
=0A
Ta
=25
°C
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(pF)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
Cib
Cob
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
相關(guān)PDF資料
PDF描述
2SB1739 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SD2720 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SB1740 12 A, 120 V, PNP, Si, POWER TRANSISTOR
2SB1832 5 A, 60 V, NPN, Si, POWER TRANSISTOR
2SB546A-AZ 2 A, 150 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB1733TL 功能描述:兩極晶體管 - BJT 30V 1A PNP LOW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SB176 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB187 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-1 -25V -.15A .2W
2SB206 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:GE PNP POWER BJT
2SB2107 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Bipolar Transistors