參數(shù)資料
型號: 2SB1733LT
元件分類: 小信號晶體管
英文描述: 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: TUMT3, 3 PIN
文件頁數(shù): 1/3頁
文件大小: 105K
代理商: 2SB1733LT
2SB1733
Transistors
Rev.A
1/2
General purpose amplification (
30V, 1A)
2SB1733
Application
Low frequency amplifier
Driver
Features
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) : max. 350mV
at Ic = 500mA / IB = 25mA
External dimensions
(Unit : mm)
ROHM :TUMT3
Abbreviated symbol : EW
(1) Base
(2) Emitter
(3) Collector
0.3
0.77
0.17
0.15Max.
2.0
1.3
0.65
(3)
(1)
(2)
1.7
0.2
2.1
0~0.1
0.85Max.
Absolute maximum ratings
(Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
30
6
1
0.4
150
55 to +150
2
1
Unit
V
A
W
°C
2
0.8
W 3
1
2
3
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Single pulse, PW
=1ms
Each Terminal Mounted on a Recommended land pattern
Mounted on a 25mm
×25mm× t 0.8mm ceramic substrate
Packaging specifications
2SB1733
TL
3000
Type
Package
Code
Basic ordering unit (pieces)
Taping
Electrical characteristics
(Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
VCB
=10V, IE=0A, f=1MHz
fT
320
MHz
VCE
=2V, IE=100mA, f=100MHz
BVCBO
30
V
IC
=10A
BVCEO
30
V
IC
=1mA
BVEBO
6
V
IE
=10A
ICBO
100
nA
VCB
=30V
IEBO
100
nA
VEB
=6V
VCE(sat)
150
350
mV
IC
=500mA, IB=25mA
hFE
270
680
VCE
=2V, IC=100mA
Cob
7
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Pulsed
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