- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄31652 > 2SB1644T100F 4 A, 80 V, PNP, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SB1644T100F |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | SC-83A, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 48K |
| 代理商： | 2SB1644T100F |
2SB1644
Transistors
Power Transistor (
80V, 4A)
2SB1644
!Features
1) Low saturation voltage.
(Typ. VCE(sat) =
0.5V at IC / IB = 3A / 0.3A)
2) Excellent DC current gain characteristics.
!
!Absolute maximum ratings
(Ta = 25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
80
5
4
30
150
55~+150
Unit
V
A (DC)
6
*
A (Pulse)
W (Tc = 25
°C)
°C
* Single pulse, Pw = 100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
!
!External dimensions
(Units : mm)
1.24
0.78
0.5Min.
0.4
1.3
4.5
0to0.3
(1) Base
(2) Collector
(3) Emitter
1.3
8.8
( 1
)
( 3
)
2.54
( 2
)
5.08
3.2
13.1
10.1
ROHM : PSD3
EIAJ : SC-83A
!
!Packaging specifications and hFE
Type
2SB1644
PSD3
EF
T100
1000
Package
hFE
Code
Basic ordering unit (pieces)
!
!Electrical characteristics
(Ta = 25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
80
60
5
100
12
100
10
1.5
320
V
A
V
MHz
pF
IC =
50A
IC =
1mA
IE =
50A
VCB =
80V
VEB =
4V
IC/IB =
3A/0.3A
VBE(sat)
1.5
V
*
IC/IB =
3A/0.3A
VCE/IC =
5V/1A
VCE =
5V , IE = 0.5A , f = 5MHz
VCB =
10V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
* Measured using pulse current.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1678Q | 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1698T100 | 1500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB544-D | 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB544-G | 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SD400-F | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1647 | 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington PNP 150V 15A 3-Pin (3+Tab) TO-3P Box 制造商:Sanken Electric Co Ltd 功能描述:Trans Darlington PNP 150V 15A 3-Pin (3+Tab) TO-3P Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP AUDIO/GP MT-100 TO-3P |
| 2SB1648 | 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP DARL 150V 17A MT200 |
| 2SB1649 | 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP DARL 150V 15A TO3PF |
| 2SB1669-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT PNP 60V 3A 3-Pin(3+Tab) TO-220AB |
| 2SB167900L | 功能描述:TRANS PNP LF 10VCE0 1.0A S-MINI RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
發(fā)布緊急采購，3分鐘左右您將得到回復。