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參數(shù)資料
| 型號： | 2SB1623A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | For Power Amplification |
| 中文描述： | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220D-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 67K |
| 代理商： | 2SB1623A |
Power Transistors
2SB1623A
Silicon PNP epitaxial planar type
1
Publication date: January 2003
SJD00301AED
For power amplification
■
Features
High forward current transfer ratio h
FE
Satisfactory linearity of forward current transfer ratio h
FE
Dielectric breakdown voltage of the package:
>
5 kV
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
80
80
5
4
8
V
Collector-emitter voltage (Base open)
V
CEO
V
Emitter-base voltage (Collector open)
V
EBO
I
C
V
Collector current
A
Peak collector current
I
CP
A
Collector power
dissipation
T
C
=
25
°
C
P
C
40
W
2.0
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
1.4
±
0.2
1.6
±
0.2
0.8
±
0.1
0.55
±
0.15
2.54
±
0.30
5.08
±
0.50
1
2
3
2.6
±
0.1
2.9
±
0.2
4.6
±
0.2
φ
3.2
±
0.1
3
±
0
9.9
±
0.3
1
±
0
1
±
0
4
±
0
S
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
V
BE
I
C
=
30 mA, I
B
=
0
V
CE
=
3 V, I
C
=
3 A
V
CB
=
80 V, I
E
=
0
V
CE
=
40 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
3 V, I
C
=
0.5 A
V
CE
=
3 V, I
C
=
3 A
I
C
=
3 A, I
B
=
12 mA
I
C
=
5 A, I
B
=
20 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
80
V
Base-emitter voltage
2.5
200
500
2
V
Collector-base cutoff current (Emitter open)
I
CBO
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
I
EBO
Emitter-base cutoff current (Collector open)
mA
Forward current transfer ratio
h
FE1
h
FE2
*
V
CE(sat)1
1
000
1
000
10
000
Collector-emitter saturation voltage
2
4
V
V
CE(sat)2
Transition frequency
f
T
t
on
20
MHz
Turn-on time
I
C
=
3 A, I
B1
=
12 mA, I
B2
=
12 mA
V
CC
=
50 V
0.3
μ
s
μ
s
μ
s
Storage time
t
stg
2.0
Fall time
t
f
0.5
Rank
R
Q
P
h
FE2
1
000 to 2
500
2
000 to 5
000 4
000 to 10
000
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