參數(shù)資料
型號: 2SB1640
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon PNP Triple Diffused Type
中文描述: 東芝硅晶體管進步黨三漫射型
文件頁數(shù): 1/4頁
文件大?。?/td> 138K
代理商: 2SB1640
2SB1640
2004-07-26
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1640
Audio Frequency Power Amplifier
Low saturation voltage: V
CE (sat)
=
1.5 V (max)
Collector metal (fin) is covered with mold region.
Complementary to 2SD2525
Maximum Ratings
(Ta = 25°C)
(I
C
=
2 A, I
B
=
0.2 A)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
60
V
Collector-emitter voltage
V
CEO
60
V
Emitter-base voltage
V
EBO
7
V
DC
I
C
3
Collector current
Pulse
I
CP
6
A
Base current
I
B
0.5
A
Collector power dissipation
P
C
1.8
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
60 V, I
E
= 0
10
μA
Emitter cut-off current
I
EBO
V
EB
=
7 V, I
C
= 0
10
μA
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
=
50 mA, I
B
= 0
60
V
h
FE (1)
V
CE
=
5 V, I
C
=
0.5 A
100
320
DC current gain
h
FE (2)
V
CE
=
5 V, I
C
=
2 A
15
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
2 A, I
B
=
0.2 A
0.1
1.5
V
Base-emitter voltage
V
BE
V
CE
=
5 V, I
C
=
0.5 A
0.75
1.0
V
Transition frequency
f
T
V
CE
=
5 V, I
C
=
0.5 A
9
MHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
= 0, f = 1 MHz
50
pF
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
B1640
Part No. (or abbreviation code)
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