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參數(shù)資料
| 型號： | 2SB1571 |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON EPITAXIAL TRANSISTOR |
| 中文描述： | 進步黨硅外延晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 2SB1571 |
Data Sheet D15930EJ2V0DS
2
2SB1571
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
A
- Ambient Temperature - C
0
120
90
30
150
60
100
80
40
60
20
d
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
0
0.2
0.4
0.6
0.8
1.0
5
4
3
2
1
I
B
=
10 mA
20 mA
50mA
V
CE
- Collector to Emitter Voltage - V
I
C
DC CURRENT GAIN vs. COLLECTOR CURRENT
0.1
0.02
0.05
0.01
0.2
0.5
10
1
2
5
1000
100
200
500
10
20
50
I
C
- Collector Current - A
h
F
V
CE
= 1 V
T
A
= 125
C
75
C
25
C
0
C
25
C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
400
200
600
800
1000
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
V
BE
- Base to Emitter Voltage - mV
I
C
V
CE
=
1
V
T
A
2
C
2
C
0
C
7
C
–
2
C
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
.
1000
500
200
100
50
20
10
1
0.01
2
5
I
C
= 20 I
B
I
C
- Collector Current - A
V
C
0.1
0.02
0.05
0.2
0.5
10
1
2
5
T
A
= 125
C
75
C
25
C
0
C
25
C
FORWARD BIAS SAFE OPERATING AREA
5
2
V
CE
- Collector to Emitter Voltage - V
1
10
100
20
50
10
5
2
1
0.05
0.02
0.01
0.5
0.2
0.1
I
C
T
= 25
C
Single Pulse
PW=1ms
10ms
100ms
DC
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