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參數(shù)資料
| 型號： | 2SB1218G-R |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI3-F2, 3 PIN |
| 文件頁數(shù)： | 5/5頁 |
| 文件大小： | 264K |
| 代理商： | 2SB1218G-R |
2SA1773 / 2SC4616
No.3399-5/5
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
This catalog provides information as of August, 2009. Specifications and information herein are subject
to change without notice.
Collector-to-Emitter Voltage, VCE -- V
A S O
Collector
Current,
I
C
-
mA
Collector-to-Emitter Voltage, VCE -- V
A S O
Collector
Current,
I
C
-
mA
Collector
Dissipation,
P
C
--
W
Case Temperature, Tc --
°C
0
18
15
10
12
14
16
8
6
4
2
20
060
40
80
100
140
120
160
PC -- Tc
Collector
Dissipation,
P
C
--
W
Ambient Temperature, Ta --
°C
0
1.2
1.0
0.8
0.6
0.4
0.2
20
060
40
80
100
140
120
160
PC -- Ta
No
heat
sink
--1000
5
7
3
2
--100
5
7
3
2
5
7
3
2
5
7
3
2
--10
--1.0
--0.1
25
37
--10
25
37
--100
25
37
2
5
3
10ms
DC
operation
(T
a=25
°C)
DC
operation
(T
c=25
°C)
1ms
IC= --2A
ITR04621
2SA1773
IT14853
ITR04624
ITR04623
1.0
0.1
25
37
10
25
37
100
25
37
2
7
5
3
1.0
1000
7
5
2
3
100
5
7
3
2
10
5
7
3
5
7
3
2
10ms
DC
operation
(T
c=25
°C)
1ms
ICP=4A
IC=2A
DC
operation
(T
a=25
°C)
2SC4616
ICP= --4A
2SA1773 / 2SC4616
Tc=25
°C
Single pulse
Tc=25
°C
Single pulse
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PDF描述 |
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| 2SB1219GS | 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1218GRL | 功能描述:TRANS PNP GP AMP 45VCEO SMINI 3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1218GSL | 功能描述:TRANS PNP 45VCEO 100MA SMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1219 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB12190RL | 功能描述:TRANS PNP GP AMP 50VCEO SMINI 3P RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1219AQR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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